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Home Question Bank Engineering Archive 2024 December 17

Engineering Questions from Dec 17,2024

Browse the Engineering Q&A Archive for Dec 17,2024, featuring a collection of homework questions and answers from this day. Find detailed solutions to enhance your understanding.

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Sketch a transistor-level schematic and stick diagram for a compound CMOS logic gate for each of the following functions: \( \begin{array}{ll}\text { a) } Y=(A B C+D)^{\prime} & \text { b) } Y=(A B+C \cdot(A+B))^{\prime} \\ \text { c) } F=((A+B) \cdot C)^{\prime} & \end{array} \) A carry lookahead adder computes \( G=G_{3}+P_{3}\left(G_{2}+P_{2}\left(G_{1}+P_{1} G_{0}\right)\right) \). Consider designing a compound gate to compute \( G^{\prime} \). a) sketch a transistor-level schematic b) sketch a stick diagram Calculate the diffusion parasitic Cdb of the drain of a unit-sized contacted nMOS transistor in a \( 0.6 \mu \mathrm{~m} \) process when the drain is at 0 and at VDD \( =5 \mathrm{~V} \). Assume the substrate is grounded. The transistor characteristics are \( \mathrm{CJ}=0.42 \) \( \mathrm{fF} / \mu \mathrm{m} 2, \mathrm{MJ}=0.44, \mathrm{CJSW}=0.33 \mathrm{fF} / \mu \mathrm{m} \), \( \mathrm{MJSW}=0.12 \), and \( \Psi_{0}=0.98 \mathrm{~V} \) at room temperature. An NMOS transistor has a nominal threshold voltage of 0.26 V . Determine the shift in threshold voltage caused by body effect using the following data. The NMOS transistor is operating at a temperature of \( 300^{\circ} \mathrm{K} \) with \( t_{\mathrm{ox}}=0.5 \times 10^{-5} \mathrm{~cm} \), \( \varepsilon_{0 \mathrm{x}}=3.9, \varepsilon_{\mathrm{s}}=11.7 \), Substrate bias voltage \( =3.5 \mathrm{~V}, \mathrm{~N}_{\mathrm{i}}=1.5 \times 10^{10} \mathrm{~cm}^{-3}, \mathrm{~N}_{\mathrm{A}}=3 \times 10^{16} \mathrm{~cm} \) \( { }^{3}, \mathrm{~K}_{\mathrm{B}}=1.38 \times 10^{-23} \mathrm{JK}^{-1}, \mathrm{q}=1.6 \times 10-19 \mathrm{C}, \varepsilon_{0}=8.85 \times 10^{-14} \mathrm{~F} / \mathrm{cm} \). Consider an nMOS transistor in a \( 0.6 \mu \mathrm{~m} \) process with \( \mathrm{W} / \mathrm{L}=4 / 2 \lambda \) (i.e., \( 1.2 / 0.6 \) \( \mu \mathrm{~m} \) ). In this process, the gate oxide thickness is \( 100 \AA \) and the mobility of electrons is \( 350 \mathrm{~cm}^{2} / \mathrm{V} \cdot \mathrm{s} \). The threshold voltage is 0.7 V . Plot Ids vs. Vds for Vgs \( =0,1,2,3,4 \), and 5 V . PART 9 - Mechanical Comprehension What type of strength helps a material to resist forces acting to pull it apart? 4:1 Gear Ratio 3:1 Gear Ratio 2:1 Gear Ratio In this diagram of a simple gearbox, the gear ratios for each pair of gears is given. What will be the output speed if the input speed is 240 rpm ? A 10 rpm
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